IRLR024PBF(2008) 查看數據表（PDF） - Vishay Semiconductors
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IRLR024PBF Datasheet PDF : 8 Pages
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IRLR024, IRLU024, SiHLR024, SiHLU024
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN.
-
-
-
TYP.
-
-
-
MAX.
110
50
3.0
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 10 V
VDS = 60 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 125 °C
VGS = 5.0 V
ID = 8.4 Ab
VGS = 4.0 V
ID = 7.0 Ab
VDS = 25 V, ID = 8.4 Ab
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 5.0 V
ID = 17 A, VDS = 48 V,
see fig. 6 and 13b
VDD = 30 V, ID = 17 A,
RG = 9.0 Ω, RD = 1.7 Ω, see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contactc
D
G
S
60
-
-
V
-
0.068
-
V/°C
1.0
-
2.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
0.10
Ω
-
-
0.14
7.3
-
-
S
-
870
-
-
360
-
pF
-
53
-
-
-
18
-
-
4.5
nC
-
-
12
-
11
-
-
110
-
ns
-
23
-
-
41
-
-
4.5
-
nH
-
7.5
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
14
A
-
-
56
Body Diode Voltage
VSD
TJ = 25 °C, IS = 14 A, VGS = 0 Vb
-
-
1.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
-
130
260
ns
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/µsb
-
0.75 1.5
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Document Number: 91322
S-81431-Rev. A, 21-Jul-08
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