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VS-SD1700C36K 查看數據表(PDF) - Vishay Semiconductors

零件编号
产品描述 (功能)
生产厂家
VS-SD1700C36K
Vishay
Vishay Semiconductors Vishay
VS-SD1700C36K Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
www.vishay.com
VS-SD1700C..K Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
Maximum peak, one cycle forward,
non-repetitive surge current
Maximum I2t for fusing
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope
resistance
High level value of forward slope
resistance
Maximum forward voltage drop
SYMBOL
IF(AV)
IF(RMS)
IFSM
I2t
I2t
VF(TO)1
VF(TO)2
rf1
rf2
VFM
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
50 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms 50 % VRRM
t = 8.3 ms reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
SD1700C..K
UNITS
24 to 36 40 to 45
2080
(1000)
1875 (920)
A
55 (85) 55 (85)
°C
3600
3280
24 000 20 000
25 150 20 950
A
20 200 16 800
21 150 17 600
2890
2000
2630
2040
1826
1415
kA2s
1860
1292
28 900 20 000 kA2s
0.89
0.88
V
1.02
0.99
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
0.23
0.21
0.31
m
0.29
Ipk = 4000 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
1.81
2.11
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
TJ
TStg
RthJ-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES UNITS
-40 to +150
°C
-55 to +200
0.042
K/W
0.020
22 250 (2250) N (kg)
425
g
K-PUK (DO-200AC)
RthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
180°
0.002
0.002
120°
0.002
0.002
90°
0.003
0.003
60°
0.004
0.004
30°
0.007
0.007
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
0.001
0.001
0.002
0.002
0.003
0.003
0.004
0.004
0.007
0.007
TEST CONDITIONS
TJ = TJ maximum
UNITS
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 11-Jan-18
2
Document Number: 93539
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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