SZ1SMA26AT3G 查看數據表（PDF） - ON Semiconductor

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SZ1SMA26AT3G

400 Watt Peak Power Zener Transient Voltage Suppressors

ON Semiconductor 

1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Power Dissipation (Note 1) @ TL = 25C, Pulse Width = 1 ms

PPK

400

W

DC Power Dissipation @ TL = 75C Measured Zero Lead Length (Note 2)

Derate Above 75C

Thermal Resistance from Junction to Lead

PD

RqJL

1.5

W

20

mW/C

50

C/W

DC Power Dissipation (Note 3) @ TA = 25C

Derate Above 25C

Thermal Resistance from Junction to Ambient

PD

RqJA

0.5

W

4.0

mW/C

250

C/W

Forward Surge Current (Note 4) @ TA = 25C

IFSM

40

A

Operating and Storage Temperature Range

TJ, Tstg

−65 to +150

C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. 10 X 1000 ms, non−repetitive.

2. 1 square copper pad, FR−4 board.

3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.

4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

ELECTRICAL CHARACTERISTICS (TA = 25C unless

otherwise noted, VF = 3.5 V Max. @ IF = 30 A for all types) (Note 5)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM Working Peak Reverse Voltage

IR

Maximum Reverse Leakage Current @ VRWM

VBR Breakdown Voltage @ IT

IT

Test Current

IF

Forward Current

VF

Forward Voltage @ IF

5. 1/2 sine wave or equivalent, PW = 8.3 ms, non−repetitive duty

cycle.

I

IF

VC VBR VRWM

IIRT VF

V

IPP

Uni−Directional TVS

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