SPU04N60S5 查看數據表（PDF） - Inchange Semiconductor
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SPU04N60S5 Datasheet PDF : 2 Pages
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isc N-Channel MOSFET Transistor
·FEATURES
·With TO-251(IPAK) packaging
·High speed switching
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·DC-DC converters
·Motor control
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
4.5
IDM
Drain Current-Single Pulsed
9
PD
Total Dissipation
50
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
℃
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
2.5
62
UNIT
℃/W
℃/W
SPU04N60S5
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
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