ISPW11N60S5 查看數據表（PDF） - Inchange Semiconductor

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ISPW11N60S5

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

SPW11N60S5

ISPW11N60S5

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP MAX UNIT

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA

600

V

VGS(th)

Gate Threshold Voltage

VDS=VGS; ID=0.5mA

3.5

5.5

V

RDS(on)

Drain-Source On-Resistance

VGS=10V; ID=7A

380 mΩ

IGSS

Gate-Source Leakage Current

VGS= 30V; VDS= 0V

IDSS

Drain-Source Leakage Current

VDS=600V; VGS= 0V

VSD

Diode forward voltage

IF=IS, VGS = 0V

0.1

μA

25

μA

1.2

V

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