BFQ193 查看數據表（PDF） - Infineon Technologies

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BFQ193

NPN Silicon RF Transistor

Infineon Technologies 

BFQ 193

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-emitter cutoff current

VCE = 20 V, VBE = 0

Collector-base cutoff current

VCB = 10 V, IE = 0

Emitter-base cutoff current

VEB = 1 V, IC = 0

DC current gain

IC = 30 mA, VCE = 8 V

V(BR)CEO 12

ICES

-

ICBO

-

IEBO

-

hFE

50

-

-

-

100

-

100

-

1

100 200

Unit

V

µA

nA

µA

-

2

Oct-12-1999

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