WeEn Semiconductors
BYV29-600P
Ultrafast power diode
12
IF(AV)
10
8
atc12-003
150°C
104
IFSM
(A)
103
atc12-004
IF
IFSM
t
tp
Tj(init) = 25 °C max
6
4
102
2
0
-50
0
50
100
150
200
Tmb (°C)
Fig. 3. Forward current as a function of mounting base
temperature; maximum values
10
10-5
10-4
10-3
10-2
tp (s)
Fig. 4. Non-repetitive peak forward current as a function
of pulse width; sinusoidal waveform; maximum values
BYV29-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 July 2017
© WeEn Semiconductors Co., Ltd. 2017. All rights reserved
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