BYW29E-100(2013) 查看數據表（PDF） - NXP Semiconductors.

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BYW29E-100
(Rev.:2013)

Ultrafast power diode

NXP Semiconductors. 

BYW29E-100

Ultrafast power diode

17 September 2013

Product data sheet

1. General description

Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package.

2. Features and benefits

• Fast switching

• Guaranteed ESD capability

• High thermal cycling performance

• Low on-state loss

• Low thermal resistance

• Rugged: reverse voltage surge capability

• Soft recovery minimizes power-consuming oscillations

3. Applications

• Output rectifiers in high-frequency switched-mode power supplies

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

VRRM

repetitive peak reverse

voltage

IF(AV)

average forward

current

δ = 0.5 ; Tmb ≤ 128 °C; square-wave

pulse; Fig. 1; Fig. 2

Static characteristics

VF

forward voltage

IF = 8 A; Tj = 150 °C; Fig. 4

Dynamic characteristics

trr

reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;

Tj = 25 °C; ramp recovery; Fig. 5; Fig. 7

Electrostatic discharge

VESD

electrostatic discharge HBM; C = 250 pF; R = 1.5 kΩ

voltage

Min Typ Max Unit

-

-

100 V

-

-

8

A

-

0.8 0.895 V

-

20

25

ns

-

-

8

kV

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