MMBT2222ATT1 查看數據表（PDF） - Willas Electronic Corp.

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MMBT2222ATT1

General Purpose Transistor

Willas Electronic Corp. 

WILLAS

FM120-M+

MMBT2222ATTTH1RU

1.0GA eSUnRFeArCaE Ml OPUuNTrSpCoHOsTeTKYTBrAaRnRIEsRisREtCoTIrFIERS -20V- 200V

FM1200-M+

SOD-123+ PACKAGE

Pb Free Product

Features

Package outline

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

• Low profile surface mounted application in orderStoOT-523

optimize board space.

SOD-123H

• Low power loss, high efficiency.

• High current capability, low forward voltage drop.

0.146(3.7)

0.130(3.3)

• High surge capability.

• Guardring for overvoltage protection.

• Ultra high-speed switching.

• Silicon epitaxial planar chip, metal silicon junction.

• Lead-free parts meet environmental standards of

.067(1.70)

MIL-STD-19500 /228

• RoHS product for packing code suffix "G"

.059(1.50)

Halogen free product for packing code suffix "H"

Mechanical data

• Epoxy : UL94-V0 rated flame retardant

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

0.040(1.0)

0.024(0.6)

• Case : Molded plastic, SOD-123H

,

• Terminals :Plated terminals, solderable per MIL-STD-750

Method 2026

0.031(0.8) Typ.

0.031(0.8) Typ.

• Polarity : Indicated by cathode band

• Mounting Position : Any

.014(0.35)

Dimensions in inches and (millimeters)

• Weight : Approximated 0.011 gram

.010(0.25)

MAXIMUM .R0A4T3IN(1G.S10AN) D ELECTRICAL CHARACTERISTICS

.008(0.20)

.004(0.10)

.035(0.90) Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive of inductive load.

For capacitive load, derate current by 20%

RATINGS

Marking Code

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

.004(0.10)MAX. Maximum Average Forward Rectified Current

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT

12

13

14

15

16

18

10

115 120

VRRM

20

30

40

50

60

80

100

150

200 Volts

VRMS

14

21

28

35

42

56

70

105

140 Volts

VDC

20

30

40

50

60

80

100

150

200 Volts

IO

1.0

Amps

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

IFSM

Typical Thermal Resistance (Note 2)

RΘJA

Typical Junction Capacitance (Note 1)

Operating Temperature Range

CJ

.014(0.T3J5)

Storage Temperature Range

.006(0T.S1TG5)

-55 to +125

30

40

120

- 65 to +175

-55 to +150

Amps

℃/W

PF

℃

℃

CHARACTERISTICS

Maximum Forward Voltage at 1.0A DC

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT

VF

0.50

0.70

0.85

0.9

0.92 Volts

Maximum Average Reverse Current at @T A=25℃

IR

0.5

mAmp

Rated DC Blocking Voltage

@T A=125℃

10

Dimensions in inches and (millimeters)

NOTES:

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

2012-11

WILLAS ELECTRONIC CORP.

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