C2517 查看數據表（PDF） - New Jersey Semiconductor
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C2517 Datasheet PDF : 2 Pages
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^E.tni-dondiLcto'i Lpioaucti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC2517
DESCRIPTION
• Low Collector Saturation Voltage ,
• Fast Switching Speed
APPLICATIONS
• Designed for high-speed switching, and is ideal for use
as a driver in devices such as switching reglators,DC/DC
converters, and high frequency power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
12
V
Ic
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
PC
Total Power Dissipation
@ TC=25'C
Tj
Junction Temperature
Tslg
Storage Temperature Range
2.5
A
30
W
150
"C
-55-150 r
' '*
j'
: 2 ;.
PIN 1. BASE
2. COLLECT OR
3. EMITTER
TO-220C package
- BM
•< V «i ..•-• F
«J *-S
U i — X.
A*
tir->
»1
*H
t]
K
rr° , '
.0
H<
••r* j
T
c |-
j
i
mm
DtM M!M MAX
A 15.50 15.00
B o.oo 10.20
r 4.20 450
D 0.70 0.00
F 3.40 3,70
G 4.08 5.18
H 2.6S 2.00
v 0.44 0,60
K 13,00 13.40
L 1.20 1.4S
0 2.70 2.00
R 2.30 2.70
S 1.29 1.35
j 0.45 6.65
y 8.66 8.86
NJ Scini-Cunductors reserves the right lo change tost conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductorsis believed to be both accurate and reliable at the time ot'goiim
to press. I Umevcr. N.I Semi-Coiuluctors assumes no responsibilit) Tor any errors or omissions discovered in its use.'
N.I Seini-t'onduclttrs encourages customers to \erily that datasheets are current before plneing orders.
Quality Semi-Conductors
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