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PSMN004-36B

N-channel TrenchMOS SiliconMAX logic level FET

NXP Semiconductors. 

PSMN004-36B

N-channel TrenchMOS SiliconMAX logic level FET

Rev. 02 — 1 March 2010

Product data sheet

1. Product profile

1.1 General description

SiliconMAX logic level N-channel enhancement mode Field-Effect Transistor (FET) in a

plastic package using TrenchMOS technology. This product is designed and qualified for

use in computing, communications, consumer and industrial applications only.

1.2 Features and benefits

„ Low conduction losses due to low

on-state resistance

„ Suitable for high frequency

applications due to fast switching

characteristics

1.3 Applications

„ DC-to-DC convertors

„ Switched-mode power supplies

1.4 Quick reference data

Table 1. Quick reference

Symbol Parameter

Conditions

Min Typ Max Unit

VDS

drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C

ID

drain current

Tmb = 25 °C; VGS = 5 V;

see Figure 1 and 3

-

-

36 V

-

-

75 A

Ptot

total power

dissipation

Tmb = 25 °C; see Figure 2

-

-

230 W

Dynamic characteristics

QGD

gate-drain charge VGS = 5 V; ID = 75 A; VDS = 15 V; -

39 -

nC

Tj = 25 °C; see Figure 11

Static characteristics

RDSon drain-source

VGS = 10 V; ID = 25 A; Tj = 25 °C; -

on-state resistance see Figure 9 and 10

3.5 4

mΩ

VGS = 5 V; ID = 25 A; Tj = 25 °C; -

see Figure 9 and 10

4

5

mΩ

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