PSMN004-36B 查看數據表（PDF） - NXP Semiconductors.
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PSMN004-36B Datasheet PDF : 14 Pages
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NXP Semiconductors
PSMN004-36B
N-channel TrenchMOS SiliconMAX logic level FET
0.01
RDS(on)
(Ω)
0.008
Tj = 25 °C
0.006
0.004
0.002
0
0
20
03ag46
VGS = 2.6 V
2.8 V
5V
10 V
40
60
80
ID = (A)
2
a
03aa27
1.5
1
0.5
0
−60
0
60
120 Tj (°C) 180
Fig 9. Drain-source on-state resistance as a function Fig 10. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
10
VGS
(V)
8
ID = 75 A
VDD = 15 V
Tj = 25 °C
03ag50
105
C
(pF)
03ag49
6
104
4
Ciss
2
0
0
40
80
120
160
200
QG (nC)
103
10−1
1
Coss
Crss
10
102
VDS (V)
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN004-36B_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 March 2010
© NXP B.V. 2010. All rights reserved.
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