BFS17S(2001) 查看數據表（PDF） - Infineon Technologies
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BFS17S Datasheet PDF : 5 Pages
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NPN Silicon RF Transistor
For broadband amplifiers up to 1 GHz at collector
currents from 1 mA to 20 mA
BFS17S
4
5
6
C1
E2
B2
6
5
4
3
2
1
VPS05604
TR2
TR1
Type
BFS17S
Marking
MCs
1
2
3
B1
E1
C2
EHA07196
Pin Configuration
Package
1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, f = 10 MHz
Total power dissipation
TS 93 °C 1)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point 2)
Symbol
VCEO
VCBO
VEBO
IC
ICM
Ptot
Tj
TA
Tstg
RthJS
Value
15
25
2.5
25
50
280
150
-65 ... 150
-65 ... 150
240
Unit
V
mA
mW
°C
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
1
Aug-20-2001
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