BFS17S(2001) 查看數據表（PDF） - Infineon Technologies

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BFS17S
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

BFS17S

Electrical Characteristics a TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-base cutoff current

VCB = 10 V, IE = 0

VCB = 25 V, IE = 0

Emitter-base cutoff current

VEB = 2.5 V, IC = 0

DC current gain

IC = 2 mA, VCE = 1 V

IC = 25 mA, VCE = 1 V

Collector-emitter saturation voltage

IC = 10 mA, IB = 1 mA

V(BR)CEO 15

-

-V

ICBO

IEBO

µA

-

- 0.05

-

-

10

-

-

100

hFE

VCEsat

-

20

-

150

20 70

-

-

0.1 0.4 V

2

Aug-20-2001

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