BFS17S 查看數據表（PDF） - Infineon Technologies

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BFS17S

NPN Silicon RF Transistor

Infineon Technologies 

NPN Silicon RF Transistor

• For broadband amplifiers up to 1 GHz at

collector currents from 1 mA to 20 mA

• BFS17S: For orientation in reel see

package information below

• Pb-free (RoHS compliant) package

BFS17S

4

5

6

3

2

1

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFS17S

Marking

Pin Configuration

Package

MCs 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

Maximum Ratings at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Peak collector current, f = 10 MHz

Total power dissipation1)

TS ≤ 93 °C

Junction temperature

Ambient temperature

Storage temperature

VCEO

VCBO

VEBO

IC

ICM

Ptot

TJ

TA

TStg

15

25

2.5

25

50

280

150

-65 ... 150

-65 ... 150

Thermal Resistance

Parameter

Symbol

Value

Junction - soldering point2)

RthJS

≤ 240

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

Unit

V

mA

mW

°C

Unit

K/W

1

2011-07-20

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