STD888 查看數據表（PDF） - Inchange Semiconductor

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STD888

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

STD888

DESCRIPTION

·Low Collector-Emitter Saturation Voltage-

: VCE(sat)= -0.7V(Max)( IC= -5A; IB= -0.25A)

·DC Current Gain -hFE = 150(Min)@ IC= -0.5A

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Power amplifier applications

·Voltage regulation in bias supply circuits applications

·Switching regulator inbattery charger applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

-60

V

VCEO Collector-Emitter Voltage

-30

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-5

A

ICM

Collector Current-Peak

PC

Total Power Dissipation

@ TC=25℃

-10

A

15

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150 ℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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