SMBYW02-200(1999) 查看數據表（PDF） - STMicroelectronics

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SMBYW02-200
(Rev.:1999)

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

STMicroelectronics 

SMBYW02-200

THERMAL RESISTANCE

Symbol

Rth (j-l)

Junction to leads

Parameter

Value

25

Unit

°C/W

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameters

Test Conditions

VF * Reverse Leakage Current Tj = 25°C

IF = 6 A

Tj = 100°C

IF = 2 A

IR ** Forward Voltage Drop

Tj = 25°C

VR = VRRM

Tj = 100°C

Pulse test : * tp = 380 µs, δ < 2 %

** tp = 5 ms, δ < 2 %

Min. Typ. Max. Unit

1.25 V

0.8 0.85

10 µA

0.1 0.3 mA

To evaluate the conductionlosses use the following equation :

P = 0.7 x IF(AV) + 0.075 x IF2(RMS)

RECOVERY CHARACTERISTICS

Symbol Test Conditions

Min. Typ. Max. Unit

trr

Tj = 25°C

IF = 1A dIF/dt = -50A/µs VR = 30V

26 35 ns

tfr

Tj = 25°C

IF = 2A dIF/dt = -50A/µs

VFR = 1.1 x VF max

30

ns

VFP

Tj = 25°C

IF = 2A dIF/dt = -50A/µs

5

V

2/5

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