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SMBYW02-200(1999) 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
SMBYW02-200
(Rev.:1999)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
SMBYW02-200 Datasheet PDF : 5 Pages
1 2 3 4 5
SMBYW02-200
Fig. 1: Low frequency power losses versus Fig. 2: Peak current versus form factor.
average current.
2.5PF(av)(W)
2.0
=0.05
=0.1 =0.2
=0.5 =1
1.5
1.0
T
0.5
IF(av)(A)
=tp/T
tp
0.0
0.0 0.4 0.8 1.2 1.6 2.0 2.4
60 IM(A)
50
40
30
P=0.5W
20
P=1.5W
10
P=2.5W
T
IM
=tp/T
tp
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig. 3: Non repetitive surge peak forward current Fig. 4: Relative variation of thermal impedance
versus overload duration.
junction to lead versus pulse duration.
20.0 IM(A)
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0.001
0.01
t(s)
0.1
IM
t
=0.5
Tc=25 oC
Tc=70 oC
Tc=100 oC
1
10
K
Zth(j-c) (tp. )
1 K = Rth(j-c)
=0.5
=0.2
0.1 =0 . 1
Singl e puls e
0.01
0.001
0.01
tp(s)
0.1
T
=tp/ T
1
tp
10
Fig. 5: Voltage drop versus forward current
(maximum values).
Fig. 6: Average current versus ambient
temperature (δ=0.5).
1.8 VFM(V)
1.6
1.4 Tl=100 oC
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
IF( av) (A)
2.5
2.0
1.5
Rth(j-a)=Rth(j-l)
Rth(j-a)=75 o C/W
1cm2 Cu
1.0 =0.5 T
0.5
I FM(A)
=tp/T
tp
Tamb(o C)
0.0
1
10 20
0 20 40 60 80 100 120 140 160
3/5

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