SMBYW02-200(1999) 查看數據表（PDF） - STMicroelectronics

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SMBYW02-200
(Rev.:1999)

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

STMicroelectronics 

SMBYW02-200

Fig. 7: Capacitance versus reverse voltage

applied.

Fig. 8: Recovery time versus dIF/dt.

Fig. 9: Peak reverse current versus dIF/dt.

Fig. 10: Dynamic parameters versus junction

temperature.

Fig. 11: Thermal resistance junction to ambient

versus copper surface under each lead.

100 Rth(j-a)

90

Printed circuit : epoxy (e=35 µm)

80

70

60

50

40

30

20

10

Scu(cm2 )

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

4/5

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