STB7NK80Z-1 查看數據表（PDF） - STMicroelectronics

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STB7NK80Z-1

N-channel 800V - 1.5Ω - 5.2A - TO-220/TO-220FP/D2PAK/I2PAK Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

STP7NK80Z - STP7NK80ZFP - STB7NK80Z - STB7NK80Z-1

2

Electrical characteristics

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

V(BR)DSS

Drain-source

Breakdown voltage

Zero gate voltage

IDSS Drain Current (VGS = 0)

IGSS

Gate-body leakage

Current (VDS = 0)

VGS(th) Gate threshold voltage

RDS(on)

Static drain-source on

resistance

Test conditions

Min. Typ. Max. Unit

ID =1MA, VGS = 0

800

VDS = Max rating

VDS = Max rating, TC = 125°C

V

1 µA

50 µA

VGS = ± 20 V

VDS = VGS, ID = 100 µA

VGS = 10 V, ID = 2.6 A

± 10 µA

3 3.75 4.5 V

1.5 1.8 Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs (1) Forward transconductance VDS = 15v, ID = 2.6 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

Coss eq. Equivalent output

(2) capacitance

VDS =0V, VDS = 0V to 640V

5

S

1138

pF

122

pF

25

pF

50

pF

td(on)

tr

tr(off)

tr

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 400 V, ID = 2.6 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 16)

20

ns

12

ns

45

ns

20

ns

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 640 V, ID = 5.2 A,

VGS = 10 V

(see Figure 17)

40 56 nC

7

nC

21

nC

tr(Voff)

tr

tc

Off-voltage rise time

Fall time

Cross-over time

VDD = 640 V, ID = 5.2 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 16)

12

ns

10

ns

20

ns

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

5/18

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