2SC1008-Y-BP 查看數據表（PDF） - Micro Commercial Components
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2SC1008-Y-BP Datasheet PDF : 2 Pages
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MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
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2SC1008-R
2SC1008-O
2SC1008-Y
2SC1008-G
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• General Purpose Switching and Amplification
• Capable of 0.8Watts of Power Dissipation.
• Collector-current 0.7A
• Collector-base Voltage 80V
• Marking : C1008
• Halogen free available upon request by adding suffix "-HF"
NPN Silicon
Epitaxial Transistor
TO-92
A
E
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
60
Vdc
(IC=10mAdc, IB=0)
V(BR)CBO Collector-Base Breakdown Voltage
80
Vdc
(IC=100µAdc, IE=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
8
Vdc
(IE=10µAdc, IC=0)
ICBO
Collector Cutoff Current
0.1 µAdc
(VCB=60Vdc, IE=0Adc)
IEBO
Emitter Cutoff Current
0.1 µAdc
(VEB=5.0Vdc, IC=0Adc)
ON CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
Cob
DC Current Gain*
(IC=50mAdc, VCE=2.0Vdc)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
Base-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
Collector Output Capacitance
(VCB=10Vdc,IC=0,f=1MHz)
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(IC=50mAdc, VCE=10Vdc)
CLASSIFICATION OF HFE (1)
Rank
Range
R
40-80
O
70-140
40
400
0.4 Vdc
1.1
Vdc
Typ 8
pF
30
Y
120-240
MHz
G
200-400
B
C
D
E
BC
E
BC
STRAIGHT LEAD BENT LEAD
G
BULK PACK AMMO PACK
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.175
.185
4.45
4.70
B
.175
.185
4.45
4.70
C
.500
---
12.70
---
D
.016
.020
0.41
0.63
E
.135
.145
3.43
3.68
G
.095
.173
.105
2.42
2.67 Straight Lead
.220
4.40
5.60 Bent Lead
* For ammo packing detailed specification, click here to visit our website
of product packaging for details.
Revision: C
www.mccsemi.com
1 of 2
2013/01/01
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