STB3N60-1 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

STB3N60-1

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STMicroelectronics 

STB3NA60-1

Switching Safe Operating Area

Accidental Overload Area

Source-drain Diode Forward Characteristics

Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

6/9

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