STW7NA100 查看數據表（PDF） - New Jersey Semiconductor

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STW7NA100

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

New Jersey Semiconductor 

u

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, Dnc.

STW7NA100

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTORS

TYPE

VDSS

RDS(on)

ID

STW7NA100

1000 V < 1.7Q

7A

TYPICAL RDS(on) = 1.45 Q

± 30V GATE TO SOURCE VOLTAGE RATING

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100°C

GATE CHARGE MINIMISED

REDUCED THRESHOLD VOLTAGE SPREAD

APPLICATIONS

. HIGH CURRENT, HIGH SPEED SWITCHING

. SWITCH MODE POWER SUPPLY (SMPS)

. DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

TO-247

INTERNAL SCHEMATIC DIAGRAM

D(2)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS Drain-source Voltage (VGS = 0)

VDGR Drain- gate Voltage (Ros = 20 kfl)

VGS Gate-source Voltage

ID Drain Current (continuous) at Tc = 25 °C

ID Drain Current (continuous) at Tc = 100 °C

!DM(«) Drain Current (pulsed)

Plot Total Dissipation at Tc = 25 °C

Derating Factor

Viso Insulation Withstand Voltage (DC)

TslQ Storage Temperature

Tj Max, Operating Junction Temperature

•) Pulse width limited by safe operating area

Value

STW7NA100

1000

1000

± 30

7

4.4

2B

190

1.52

—

-65 to 150

150

Unit

V

V

V

A

A

A

W

w/°c

V

°c

°c

Quality Semi-Conductors

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