STW7NA100 查看數據表（PDF） - New Jersey Semiconductor
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STW7NA100 Datasheet PDF : 3 Pages
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Qfl
Total Gate Charge
Qgs Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDD=500V
3.5 A
RG = 4.7£i
VDD = 800V
ID = 7 A
lo =
VGs = 10V
VGs=10V
Min.
Typ.
28
19
125
17
58
Max.
40
27
Unit
ns
ns
150 nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 800 V
RG = 4.7£i
ID = 7A
VGS = 1 0 V
Min.
Typ.
35
15
55
Max.
50
21
77
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
!SDM(»)
Source-drain Current
Source-drain Current
(pulsed)
V S D ( * ) Forward On Voltage ISD = 7 A
VGS = 0
trr
Reverse Recovery
ISD = 7 A
Time
VOD = 100 V
Qrr
Reverse Recovery
Charge
IRRM Reverse Recovery
Current
(») Pulsed: Pulse duration = 300 us, duty cycle 1.5%
(•) Pulse width limited by safe operating area
di/dt = 100 A/U.S
TJ = 150 °C
Min.
Typ.
Max.
7
28
Unit
A
A
1.6
V
835
ns
14
uc
33
A
TO-247 MECHANICAL DATA
mm
DIM.
Inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX
A
4.7
5.3
0.185
0.209
0
2.2
E
0.4
2.6
0.087
o.e
0.0 16
0.102
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
10.9
0.429
H
15.3
15.9
0602
0.626
L
19.7
20.3
0776
0.779
L3
14.2
14.8
0.559
0.413
0.582
L4
34.6
1.362
L5
5.5
0.217
M
2
3
0.079
0.118
Dia
3.55
3.65
0.140
0.144
1J*-,
A
h
Dia.
^•\
> C
-T^
L4
~-
^
F3
F
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