C3519A 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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C3519A Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-Emitter
Breakdown Voltage
2SC3519
2SC3519A
IC= 25mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A
ICBO
Collector
Cutoff Current
2SC3519 VCB= 160V; IE= 0
2SC3519A VCB= 180V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 5A ; VCE= 4V
COB
Output Capacitance
IE= 0; VCB= 10V;ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product IE= -2A ; VCE= 12V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 10A ,RL= 4Ω,
IB1= -IB2= 1A,VCC= 40V
hFE Classifications
O
P
Y
50-100 70-140 90-180
2SC3519/A
MIN TYP. MAX UNIT
160
V
180
2.0
V
100
μA
100
100 μA
50
180
250
pF
50
MHz
0.2
μs
1.3
μs
0.45
μs
SPTECH website：www.superic-tech.com
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