MAC4DHM-1 查看數據表（PDF） - ON Semiconductor
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MAC4DHM-1 Datasheet PDF : 8 Pages
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MAC4DHM
110
105
100
95
90
0
a = 30°
60°
90°
α
α
120°
a = CONDUCTION ANGLE
180° dc
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
IT(RMS), RMS ON–STATE CURRENT (AMPS)
Figure 1. RMS Current Derating
6.0
5.0
α
α
4.0
a = CONDUCTION ANGLE
3.0
180°
dc
120°
90°
2.0
1.0
0
0
60°
a = 30°
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
IT(RMS), RMS ON–STATE CURRENT (AMPS)
Figure 2. On–State Power Dissipation
100
1.0
TYPICAL @ TJ = 25°C
10
MAXIMUM @ TJ = 110°C
0.1
1.0
ZqJC(t) = RqJC(t)Sr(t)
MAXIMUM @ TJ = 25°C
0.1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
Figure 3. On–State Characteristics
0.01
0.1
1.0
10
100
1000
10 K
t, TIME (ms)
Figure 4. Transient Thermal Response
8.0
7.0
Q4
6.0
5.0
Q3
4.0
Q2
3.0
Q1
2.0
1.0
0
–40 –25 –10 5.0 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
1.0
Q4
Q1
0.8
Q2
Q3
0.6
0.4
0.2
–40 –25
–10 5.0 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
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