2SA1261 查看數據表（PDF） - New Jersey Semiconductor
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2SA1261 Datasheet PDF : 2 Pages
| |||
, Una,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA1261
DESCRIPTION
• Low Collector Saturation Voltage-
: VCE<Mtr -0.6V(Max.)@lc= -5A
• Fast Switching Speed
• Complement to Type 2SC3157
APPLICATIONS
• Developed for high-voltage high-speed switching, and is
ideal for use as a driver in devices such as switching reg-
lators, DC/DC converters, and high frequency power am-
plifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO Emitter-Base Voltage
-7.0
V
Ic
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25°C
PC
Collector Power Dissipation
@ TC=25"C
Tj
Junction Temperature
-3.5
A
1.5
W
60
150
•c
Tstg
Storage Temperature Range
-55-150 •c
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-220C package
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A
m ID
DIN WIN MAX
A 15.50 15.90
B 9.00 10.20
£ 4.20 4.50
D 0.70 0.90
F 3.40 3.70
G 4.08 5.18
H 2.6S 2.90
J 0.44 0.60
K 13.00 13.40
L 1.20 1.4S
Q 2.70 2.00
R 2.30 2.70
S 1.20 1.35
U 6.45 6.65
V 8.66 8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout
notice. In formation furnished hy NJ Semi-Conductors is believed to he both accurate and reliable at the time or'agoiing
to press. However. NJ Semi-Conductors assumes no responsibility for anv errors or omissions discoveredin its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Serni-Conductors
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