2SD905 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SD905 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB= 1.5A
ICES
Collector Cutoff Current
VCE= 1400V ; RBE= 0
hFE
DC Current Gain
IC= 1A ; VCE= 5V
tf
Fall Time
ICP= 6.8A , IB1= 1.1A, LB= 0
2SD905
MIN TYP. MAX UNIT
5
V
650
V
10
V
1.5
V
0.5 mA
8
1
μs
SPTECH website：www.superic-tech.com
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