C3181 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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生产厂家

C3181

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Low Collector Saturation Voltage-

: VCE(sat)= 2.0V(Max.) @IC= 6A

·Good Linearity of hFE

·Complement to Type 2SA1264

APPLICATIONS

·Power amplifier applications

·Recommend for 55W high fidelity audio frequency

amplifier output stage applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

120

V

VCEO

Collector-Emitter Voltage

120

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

8

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

0.8

A

80

W

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

2SC3181

SPTECH website：www.superic-tech.com

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