2SB1144 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SB1144 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon PNP Power Transistor
DESCRIPTION
··Low Collector Saturation Voltage
: VCE(sat)= -0.3V(Max)@IC= -0.5A
·Wide Area of Safe Operation
·Complement to Type 2SD1684
APPLICATIONS
·Designed for 100V/1.5A Switching Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-1.5
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
-2
A
10
W
1.5
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SB1144
SPTECH website：www.superic-tech.com
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