2SB1144 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SB1144

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0

V(BR)CBO Collector-Base Breakdown Voltage

IC= -10uA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -10μA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA

VBE(sat) Base-Emitter Saturation Voltage

IC= -500mA; IB= -50mA

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -4V; IC= 0

hFE-1

DC Current Gain

IC= -0.1A; VCE= -5V

hFE-2

DC Current Gain

IC= -1A; VCE= -5V

fT

Current-Gain—Bandwidth Product

IC= -0.5A; VCE= -5V

COB

Output Capacitance

IE=0; VCB= -10V, ftest= 1MHz

 hFE -1Classifications

Q

S

T

100-200 140-280 200-400

2SB1144

MIN TYP. MAX UNIT

-100

V

-120

V

-6

V

-0.3 V

-1.2 V

-0.1 μA

-0.1 μA

100

400

30

120

MHz

11

pF

SPTECH website：www.superic-tech.com

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