T10XX 查看數據表（PDF） - STMicroelectronics
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T10XX Datasheet PDF : 14 Pages
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BTA10, BTB10, T10xx
Characteristics
Table 4: Electrical characteristics (Tj = 25 °C, unless otherwise specified) - Snubberless™
(3 quadrants)
Symbol Parameter
Quadrant
BTA10/BTB10
T1050 Unit
CW BW
IGT(1)
VGT
VD = 12 V, RL = 33 Ω
I - II - III Max. 35
50
mA
I - II - III Max.
1.3
V
VGD
VD = VDRM, RL = 3,3 kΩ,
Tj = 125 °C
I - II - III Min.
0.2
V
IH(2)
IT = 500 mA
Max. 35
50
mA
IL
IG = 1.2 IGT
I - III
II
Max. 50
Max. 60
70
mA
80
dV/dt(2)
(dI/dt)c(2)
VD = 67 % VDRM gate open,
Tj = 125 °C
(dI/dt)c = 5.3 A/ms, Tj = 125 °C
Min. 500
Min. 5.5
1000
9
V/µs
A/ms
Notes:
(1) Minimum IGT is guaranteed at 5 % of IGT max.
(2) For both polarities of A2 referenced to A1
Table 5: Electrical characteristics (Tj = 25 °C, unless otherwise specified) - standard Triac
(4 quadrants)
Symbol Parameter
Quadrant
Value
Unit
CB
IGT(1)
VD = 12 V, RL = 33 Ω
I - II - III
IV
Max. 25 50
mA
Max. 50 100
VGT
All
Max.
1.3
V
VGD
VD = VDRM, RL = 3,3 kΩ, Tj = 125 °C
IH(2)
IT = 500 mA
I - II - III Min.
0.2
V
Max. 25 50 mA
IL
IG = 1.2 IGT
I - III
II
Max. 40 50
mA
Max. 80 100
dV/dt(2) VD = 67 % VDRM gate open, Tj = 125 °C
Min. 200 400 V/µs
(dV/dt)c(2) (dI/dt)c = 4.4 A/ms, Tj = 125 °C
Min. 5 10 V/µs
Notes:
(1) Minimum IGT is guaranteed at 5 % of IGT max.
(2) For both polarities of A2 referenced to A1
DocID2937 Rev 7
3/14
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