1N6519(2017) 查看數據表（PDF） - getedz electronics

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1N6519
(Rev.:2017)

High Voltage Power Diodes Ultra-Fast Recovery

getedz electronics 

1N6519

500mA 10kV 50nS

High Voltage Power Diodes Ultra-Fast Recovery

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INTRODUCE:

SHAPE DISPLAY:

HVGT high voltage silicon rectifier diodes is made

of high quality glass passivated chip and high

reliability epoxy resin sealing structure, and

through professional testing equipment inspection

qualified after to customers.

FEATURES:

1. High reliability design.

2. High voltage design.

3. High frequency, Fast recovery.

4. Conform to RoHS and SGS.

SIZE: (Unit:mm)

HVGT NAME: DO-590

5. Epoxy resin molded in vacuumHave

anticorrosion in the surface.

APPLICATIONS:

1. High voltage multiplier circuit

2. Electrostatic generator circuit .

3. General purpose high voltage rectifier.

4. Other.

MECHANICAL DATA:

1. Case: epoxy resin molding.

2. Terminal: welding axis.

3. Net weight: 2.1 grams (approx).

MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value Units

Repetitive Peak Renerse Voltage

VRRM

TA=25°C

10

kV

Non-Repetitive Peak Renerse Voltage

VRSM

TA=25°C

--

kV

Average Forward Current Maximum

IFAVM

TA=55°C

TOIL=55°C

500

mA

--

mA

Non-Repetitive Forward Surge Current

IFSM

TA=25°C; 60Hz Half-Sine Wave; 8.3mS

25

A

Junction Temperature

TJ

150

°C

Allowable Operation Case Temperature

Tc

-40~+150

°C

Storage Temperature

TSTG

ELECTRICAL CHARACTERISTICS: TA=25°C (Unless Otherwise Specified)

Items

Symbols

Condition

-40~+150

°C

Data value Units

Maximum Forward Voltage Drop

VFM

at 25°C; at IFAVM

13

V

Maximum Reverse Current

IR1

at 25°C; at VRRM

IR2

at 125°C; at VRRM

1.0

uA

50

uA

Maximum Reverse Recovery Time

TRR

at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR

50

nS

Junction Capacitance

CJ

at 25°C; VR=0V; f=1MHz

7.5

pF

GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com

GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2017-10 1 / 2

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