2SD1395 查看數據表（PDF） - Inchange Semiconductor
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2SD1395 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1395
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
·High DC Current Gain
: hFE= 1000(Min) @IC= 2.5A
·Low Saturation Voltage
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICP
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
8
A
40
W
150
℃
-55~150
℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
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