2SC3063 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SC3063 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
·Good Linearity of hFE
·Low Saturation Voltage
APPLICATIONS
·Designed for TV video output amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
0.1
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
0.2
A
1.2
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3063
SPTECH website：www.superic-tech.com
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