C4237 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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C4237 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
ICBO
Collector Cutoff Current
At rated Voltage
ICEO
Collector Cutoff Current
At rated Voltage
IEBO
Emitter Cutoff Current
At rated Voltage
hFE-1
DC Current Gain
IC= 5A ; VCE= 5V
hFE-2
DC Current Gain
IC= 1mA ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 10V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 5A , IB1= 1A; IB2= -2A
RL= 50Ω; VBB2= 4V
2SC4237
MIN TYP. MAX UNIT
800
V
1.0
V
1.5
V
100 μA
100 μA
100 μA
8
5
8
MHz
0.5 μs
3.5 μs
0.3 μs
SPTECH website：www.superic-tech.com
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