2SB1421 查看數據表（PDF） - New Jersey Semiconductor

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2SB1421

Silicon PNP Power Transistor

New Jersey Semiconductor 

c$£mi-Condiictoi iJ^ioducti, One.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SB1421

DESCRIPTION

• Collector-Emitter Breakdown Voltage-

: V(BR)CEo= -140V(Min)

• Wide Area of Safe Operation

• Complement to Type 2SD2140

APPLICATIONS

• Designed for high power amplifications.

• Optimum for the output stage of a HiFi audio amplifier

TIH:I Base

2 Collector

3 Emitter

TO-3FH package

-«- C

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

-140

V

VCEO Collector-Emitter Voltage

-140

V

VEBO

Emitter-Base Voltage

Ic

Collector Current-Continuous

ICP

Collector Current-Pulse

Collector Power Dissipation

@ Tc=25t:

PC

Collector Power Dissipation

@ Ta=25'C

Tj - Junction Temperature

Tstg

Storage Temperature Range

-5

V

-7

A

-12

A

80

W

2.5

150

°C

-55-150

•c

mm

DIM WIN MAX

A 19.60 20.10

B 15.50 15.70

C 4.70 4.90

D 0.90 1.10

E 1.90 2,10

F 3.40 3.60

G 2.90 3.20

H 3.20 3.40

J 0.595 0.605

K 20.00 20,70

L 1.90 2.20

N 10.89 10.91

Q 4.90 5.10

R 3.35 3.45

u$ 1.995 2.100

5.90 6,10

Y 9.90 1 10.10

N.I Semi-Conductors reserves the right to change tost conditions, parameter limits ;irul package dimensions \vithout

notice. Information rimii.shed by N.I Semi-Conductors is believed to he hoth iiccnnite mid relkihle at the time ofgoiii

lo press. I luuever, N.I Senii-Coiklnelors assumes no responsihilily lor anv errors or omissions discovered in its use.

N.I Scmi-( 'ondticlors cncnuni^es ciistonn-rs lo \erily thai datashecK are cmivnt hcl'oiv placinj; orders.

Qualify -Semi-Conductors

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