2SD745 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SD745 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min)
·Complement to Type 2SB705
·High Power Dissipation
APPLICATIONS
·For audio frequency power amplifier applications
·Suitable for output stages of 60~120 watts audio amplifier
and voltage regulations.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
140
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
15
A
120
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
SPTECH website：www.superic-tech.com
2SD745
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