2SD745 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SD745 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB= 140V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE-1
DC Current Gain
IC= 50mA; VCE= 5V
hFE-2
DC Current Gain
IC= 2A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 0.2A; VCE= 5V
hFE-2 Classifications
S
R
Q
40-80 60-120 100-200
2SD745
MIN TYP. MAX UNIT
1.5
V
2.0
V
50 μA
50 μA
20 55
40 80 200
270
pF
15
MHz
SPTECH website：www.superic-tech.com
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