2N5165 查看數據表（PDF） - Digitron Semiconductors
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2N5165 Datasheet PDF : 6 Pages
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DIGITRON SEMICONDUCTORS
2N5164-2N5171
SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage(1)(2)
2N5164, 2N5168
2N5165, 2N5169
2N5166, 2N5170
2N5167, 2N5171
VRRM, VDRM
50
200
Volts
400
600
Non repetitive peak reverse blocking voltage
2N5164, 2N5168
2N5165, 2N5169
2N5166, 2N5170
2N5167, 2N5171
VRSM
75
300
Volts
500
700
Forward current RMS
Average on state current, TC = 67°C
Circuit fusing considerations, TJ = -40 to +100°C; t = 8.3ms
IT(RMS)
IT(AV)
I2t
20
Amps
13
Amps
235
A2s
Peak non-repetitive surge current (TJ = -40 to +100°C)
(1 cycle, 60Hz preceded and followed by rated current and voltage)
ITSM
Amps
240
Peak gate power (maximum pulse width = 10µs)
PGM
5
Watts
Average gate power
Forward peak gate current (maximum pulse width = 10µs)
Peak gate voltage
PG(AV)
IGM
VGM
0.5
Watts
2
Amps
10
Volts
Operating junction temperature range
TJ
-40 to +100
°C
Storage temperature range
Tstg
-40 to +150
°C
Mounting torque (2N5168-2N5171)
-
30
In. lb.
Note 1: VDRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices
are exceeded.
Note 2: Devices should not be operated with a positive bias applied to the gate concurrent with a negative potential applied to the anode.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typical Maximum
Unit
Thermal resistance, junction to case
2N5164, 2N5165, 2N5166, 2N5167
2N5168, 2N5169, 2N5170, 2N5171
RӨJC
1
1.5
°C/W
1.1
1.6
ELECTRICAL CHARACTERISTICS (TC 25°C unless otherwise noted)
Characteristic
Symbol
Peak forward blocking current
(Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 100°C
IDRM or IRRM
Gate trigger current (continuous dc)(1)
(VD = 7 Vdc, RL = 100 Ω)
IGT
(VD = 7 Vdc, RL = 100 Ω, TC = -40°C)
Gate trigger voltage (continuous dc)
(VD = 7 Vdc, gate open)
(VD = 7 Vdc, RL = 100 Ω, TC = -40°C)
VGT
(VD = Rated VDRM, RL = 100 Ω, TJ = 100°C)
Min.
-
-
-
-
-
-
0.2
Max.
10
5
40
75
1.5
2.5
-
Unit
µA
mA
mA
volts
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130117
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