2N5164 查看數據表（PDF） - Digitron Semiconductors

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2N5164

SILICON CONTROLLED RECTIFIER

Digitron Semiconductors 

DIGITRON SEMICONDUCTORS

2N5164-2N5171

SILICON CONTROLLED RECTIFIER

Characteristic

Symbol

Min.

Max.

Peak on state voltage

(pulse width = 1ms max., duty cycle ≤ 1%)

(ITM = 20A)

(ITM = 41A)

Holding current

(VD = 7Vdc, gate open)

(VD = 7Vdc, gate open ,TC = -40°C)

Gate controlled turn-on time

(ITM = 20A, IGT = 40mA, VD = rated VDRM)

VTM

-

1.5

8

1.7

IH

-

50

-

90

Typical

tgt

1

Circuit commutated turn-off time

(ITM = 10A, IR = 10A)

(ITM = 10A, IR = 10A, TJ = 100°C)

(VD = VDRM = rated voltage)

(dv/dt = 30V/µs)

20

tq

30

Critical rate of rise of off-state voltage

dv/dt

(VD = rated VDRM, exponential waveform, TJ = 100°C, gate open)

50

Note 1: Devices should not be operated with a positive bias applied to the gate concurrent with a negative potential applied to the anode.

MECHANICAL CHARACTERISTICS

Case

Digi PF1 (2N5164-2N5167)

Marking

Body painted, alpha-numeric

Unit

Volts

mA

µs

µs

V/µs

DIGI PF1

Inches

Millimeters

Min Max Min Max

A 0.501 0.505 12.730 12.830

F

-

0.160

-

4.060

G 0.085 0.095 2.160 2.410

H 0.060 0.070 1.520 1.780

J 0.300 0.350 7.620 8.890

K

-

1.050

-

26.670

L

-

0.670

-

17.020

Q 0.055 0.085 1.400 2.160

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

Rev. 20130117

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