2SD1958 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SD1958 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
COB
Output Capacitance
tf
Fall Time
IE= 0; VCB= 10V; f= 1.0MHz
IC= 0.5A; IB1= IB2= 50mA;
VCC= 20V; RL= 40Ω
2SD1958
MIN TYP. MAX UNIT
60
V
200
V
6
V
1.0
V
1.5
V
100 μA
100 μA
30
160
25
10
MHz
110
pF
0.5 μs
SPTECH website：www.superic-tech.com
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