BU102S 查看數據表（PDF） - Unspecified
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BU102S Datasheet PDF : 3 Pages
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www.jdsemi.cn
深圳市晶导电子有限公司
ShenZhen Jingdao Electronic Co.,Ltd.
BU102S
Bipolar Junction Transistor
◆Si NPN
◆RoHS COMPLIANT
1．APPLICATION
Fluorescent Lamp、Charger
and Switch-mode power supplies
2．FEATURES
High voltage capability
Features of good high temperature
High switching speed
3．PACKAGE
TO-92T
4．Electrical Characteristics
4.1 Absolute Maximum Ratings
Tamb= 25℃ unless specified
PARAMETER
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Power Dissipation
Ta=25℃
Tc=25℃
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25℃ unless specified
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emittor Voltage
Emittor-Base Voltage
Collector-Base Cutoff Current
Collector-Emittor Cutoff Current
Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation Voltage
Base-Emittor Saturation Voltage
Rising Time
Falling Time
Storage Time
Typical Frequency
＊: Pulse test tp≤300μs,δ≤2%
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE*
VCE
*
sat
VBE
*
sat
tr
tf
ts
fT
1 Base(B) 2 Collector(C) 3 Emitter(E)
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
VALUE
700
400
9
1.0
0.8
11
150
-55～150
UNIT
V
V
V
A
W
℃
℃
TEST CONDITION
IC=1mA,IE=0
IC=1mA ,IB=0
IE=1mA,IC=0
VCB=700V, IE=0
VCE=400V, IB=0
VEB=9V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=100mA
IC=500mA, IB=250mA
IC=500mA, IB=250mA
IC=100mA (UI9600)
VCE=10V,IC=0.1A,
f=1MHz
VALUE
MIN TYP MAX
700
400
9
10
20
10
8
15
30
0.6
1.2
0.7
0.9
2.0
3.5
UNIT
V
V
V
μA
μA
μA
V
V
μs
5
MHz
Add： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel：0755-29799516 Fax：0755-29799515
第 1 页 2013 版
Free Datasheet http://www.datasheetlist.com/
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