K867 查看數據表（PDF） - Inchange Semiconductor
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K867 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK867
DESCRIPTION
·Drain Current –ID=15A@ TC=25℃
·Drain Source Voltage-
: VDSS=400V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
400
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃
15
A
Total Dissipation@TC=25℃
120
W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
1.67
Thermal Resistance,Junction to Ambient 62.5
℃/W
℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
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