2N7002KW(2014) 查看數據表（PDF） - Unisonic Technologies
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2N7002KW Datasheet PDF : 4 Pages
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2N7002KW
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
60
V
±20
V
Drain Current
Continuous
Pulse(Note 2)
ID
300
800
mA
Power Dissipation
Derating above TA=25°C
PD
200
mW
1.6
mW/°C
Junction Temperature
Storage Temperature
TJ
TSTG
+150
°C
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=10µA
60
Drain-Source Leakage Current
IDSS
VDS=60V, VGS=0V
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=10V, ID=1mA
1.0 1.85
Static Drain-Source On-Resistance (Note)
RDS(ON)
VGS=10V, ID=300m A
VGS=4.5V, ID=200mA
DYNAMIC PARAMETERS
Input Capacitance
CISS
25
Output Capacitance
COSS VDS=25V, VGS=0V, f=1.0MHz
10
Reverse Transfer Capacitance
CRSS
3.0
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-OFF Delay Time
tD(ON) ID=0.2 A, VDD=30V, VGS=10V,
12
tD(OFF) RL=150Ω, RG=10Ω
20
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, Is=300mA (Note )
0.88
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Maximum Continuous Drain-Source Diode
Forward Current
IS
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
2. Pulse width≦300μs, Duty cycle≦1%
MAX UNIT
V
1.0 µA
±10 µA
2.5 V
2
4
Ω
50 pF
25 pF
5.0 pF
20 ns
30 ns
1.5 V
0.8 A
300 mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R209-033.A
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