2N7002KW 查看數據表（PDF） - PANJIT INTERNATIONAL

零件编号

产品描述 (功能)

生产厂家

2N7002KW

60V N-Channel Enhancement Mode MOSFET - ESD Protected

PANJIT INTERNATIONAL 

2N7002KW

Vgs

Qg

Vgs(th)

Qsw

Qg(th)

Qgs

Qgd

Qg

Fig.6 - Gate Charge Waveform

1.2

ID =250mA

1.1

1

0.9

0.8

0.7

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (oC)

Fig.8 - Threshold Voltage vs Temperature

10

VGS=0V

1

0.1 TJ=125℃

25℃

0.01

0.2

-55℃

0.4 0.6 0.8 1 1.2 1.4 1.6

VSD - Source-to-Drain Voltage (V)

Fig.10 - Source-Drain Diode Forward Voltage

10

VDS=10V

ID=250mA

8

6

4

2

0

0

0.2

0.4

0.6

0.8

1

Qg - Gate Charge (nC)

Fig.7 - Gate Charge

88

ID = 250uA

86

84

82

80

78

76

74

72

-50 -25 0

25 50 75 100 125 150

TJ - Junction Temperature (oC)

Fig.9 - Breakdown Voltage vs Junction Temperature

May 21.2010-REV.01

PAGE . 4

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