2N7002KW 查看數據表（PDF） - Formosa Technology
零件编号
产品描述 (功能)
生产厂家
2N7002KW Datasheet PDF : 8 Pages
| |||
N-Channel SMD MOSFET ESD Protection
2N7002KW
Formosa MS
Electrical characteristics (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
STATIC
Drain-source breakdown voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drai n Current
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
VGS = 0V, ID = 10uA
VDS = VGS , ID = 250uA
VGS = 4.5V, ID =200mA
VGS = 10V, ID = 500mA
VDS = 60V, VGS = 0V
VGS = +/-20V, VDS = 0V
VDS = 15V, ID = 250mA
IS = 200mA, VGS = 0V
DYNAMIC
Total Gate Charge
Turn-On Delay Time
Turn-Off Delay Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 15V, ID = 200mA
VDD = 4.5V
VDD = 30V, RL = 150 ohm, ID = 200mA,
VGEN = 10V, RG = 10 ohm
VDS = 25V, VGS = 0V
f = 1.0 MHz
Symbol
MIN. TYP. MAX. UNIT
BVDSS
60
VGS(th)
1.0
RDS(on)
V
2.5
V
4.0
Ω
3.0
IDSS
IGSS
gfS
VSD
1
µA
±10
µA
100
ms
0.82 1.3
V
Qg
ton
toff
Ciss
Coss
Crss
0.80
nC
20
ns
40
35
10
pF
5
Switching
Test Circuit
Gate Charge
Test Circuit
VDD
VDD
VGS
VIN
RG
G
RL
D
VOUT
DUT
S
VGS
1mA
VGS
G
RG
RL
D
DUT
S
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 3
Document ID Issued Date
DS-251127 2009/07/10
Revised Date Revision
2012/02/02
B
Page.
8
Share Link: 