2N7002K 查看數據表（PDF） - Yangzhou yangjie electronic co., Ltd
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2N7002K Datasheet PDF : 6 Pages
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2N7002K
■ Electrical Characteristics (TJ=25℃ unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
BVDSS
IDSS
IGSS1
IGSS2
IGSS3
VGS(th)
RDS(ON)
VGS= 0V, ID=250μA
VDS=60V,VGS=0V
VGS= ±20V, VDS=0V
VGS= ±10V, VDS=0V
VGS= ±5V, VDS=0V
VDS= VGS, ID=250μA
VGS= 10V, ID=300mA
VGS= 4.5V, ID=200mA
60
V
1
μA
±9
μA
±200
nA
±100
nA
1
1.4
2.5
V
1.3
2.5
Ω
1.4
3.0
Diode Forward Voltage
VSD
IS=300mA,VGS=0V
1.2
V
Maximum Body-Diode Continuous Current
IS
Dynamic Parameters
340
mA
Input Capacitance
Ciss
18
Output Capacitance
Coss
VDS=30V,VGS=0V,f=1MHZ
12
pF
Reverse Transfer Capacitance
Crss
7
Switching Parameters
Total Gate Charge
Qg
VGS=10V,VDS=30V,ID=0.3A
Turn-on Delay Time
Turn-off Delay Time
tD(on)
tD(off)
VGS=10V,VDD=30V, ID=300mA,
RGEN=6Ω
Reverse recovery Time
trr
VGS=0V,IS=300mA,VR=25V, dIS/dt=-
100A/μs
A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.
B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
1.7
2.4
nC
5
ns
17
30
ns
S-S1396
Rev.2.0,25-Dec-18
2/6
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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