2N7002K(2007) 查看數據表（PDF） - Diodes Incorporated.

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2N7002K
(Rev.:2007)

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Diodes Incorporated. 

2N7002K

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 2)

• ESD Protected Up To 2kV

• "Green" Device (Note 4)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

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SOT-23

Case: SOT-23

Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Finish ⎯ Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Marking Information: See Page 3

Ordering & Date Code Information: See Page 3

Weight: 0.008 grams (approximate)

Drain

D

ESD protected up to 2kV

TOP VIEW

Gate

Gate

Protection

Diode

Source

EQUIVALENT CIRCUIT

Maximum Ratings @TA = 25°C unless otherwise specified

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Note 1)

Characteristic

Continuous

Pulsed (Note 3)

Symbol

VDSS

VGSS

ID

G

S

TOP VIEW

Value

60

±20

300

800

Units

V

V

mA

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic

Total Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

Symbol

Pd

RθJA

Tj, TSTG

Value

350

357

-65 to +150

Units

mW

°C/W

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Symbol Min Typ Max Unit

Test Condition

BVDSS 60 ⎯

⎯

V VGS = 0V, ID = 10μA

IDSS

⎯ ⎯ 1.0 μA VDS = 60V, VGS = 0V

IGSS

⎯ ⎯ ±10 μA VGS = ±20V, VDS = 0V

VGS(th) 1.0 1.6 2.5 V VDS = 10V, ID = 1mA

RDS (ON) ⎯

⎯ 2.0

⎯ 3.0

Ω VGS = 10V, ID = 0.5A

VGS = 5V, ID = 0.05A

|Yfs|

80 ⎯ ⎯ ms VDS =10V, ID = 0.2A

Ciss

Coss

Crss

⎯ ⎯ 50 pF

⎯

⎯

25

pF

VDS = 25V, VGS = 0V

f = 1.0MHz

⎯ ⎯ 5.0 pF

Note:

1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Short duration pulse test used to minimize self-heating effect.

2N7002K

Document number: DS30896 Rev. 3 - 2

1 of 4

www.diodes.com

November 2007

© Diodes Incorporated

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