SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
·ESD Protected 2000V.
·High density cell design for low RDS(ON).
·Voltage controlled small signal switch.
·Rugged and reliable.
·High saturation current capablity.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed (Note 1)
Drain Power Dissipation (Note 2)
Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient (Note 2)
Note 1) Pulse Width≦10㎲, Duty Cycle≦1%
Note 2) Surface Mounted on 2 ×2 FR4 Board
VDSS
VGSS
ID
IDP
PD
Tj
Tstg
RthJA
60
±20
300
1200
270
150
-55~150
460
UNIT
V
V
mA
mW
℃
℃
℃/W
2N7002KDU
N Channel MOSFET
ESD Protected 2000V
B
B1
1
6
DIM MILLIMETERS
A
2.00+_ 0.20
2
5
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4 D B1
1.25+_ 0.1
C
0.65
D
0.2+0.10/-0.05
G
0-0.1
H
0.9+_ 0.1
T
T
0.15+0.1/-0.05
G
1. Q1 SOURCE
2. Q1 GATE
3. Q2 DRAIN
4. Q2 SOURCE
5. Q2 GATE
6. Q1 DRAIN
US6
EQUIVALENT CIRCUIT
6
5
4
1
2
3
Marking
6
5
4
DU Type Name
Lot No.
1
2
3
2013. 7. 19
Revision No : 1
1/4